題  目：DirectedSelf-Assembly for Nanolithgraphy: Writing with Polymers

報(bào)告人: Prof. Jillian Buriak

Department of Chemistry, and the National Institutefor Nanotechnology, University of Alberta, Edmonton, Alberta, Canada

時(shí)　間：2018年4月20日(星期五)下午2:00

地　點(diǎn)：化學(xué)樓A204/206

主請(qǐng)人：趙達(dá)慧

報(bào)告摘要：

Nanopatternedsurfaces are of central importance to a variety of areas and applications, suchas computer chip architectures, tissue interfacing, biosensors, lightmanagement and plasmonics, among others.One of the most important materials for a myriad of functions is silicon, as the functionalization of silicon surfaces is of interestfor computing applications, water splitting, batteries, on-chip sensing,molecular electronics, and solar energy conversion, amongst many others. Typically,the various approaches to nanopatterning of surfaces, including silicon, arebroken into two major classes: top-down methods such as photolithography,e-beam lithography and scanning force microscopy variants, and bottom-upsynthetic techniques, including self-assembly. Since lithography is the singlemost expensive step in computer chip manufacturing, the use of self-assembledblock copolymers (BCPs) templates on surfaces is being seriously considered bythe semiconductor industry to pattern, sub-20 nm features on a semiconductorsurface; the Industry Technology Roadmap for Semiconductors (ITRS) terms thisdevelopment ‘directed self-assembly’, or DSA. Here, we will describe theremarkable versatility of using BCPs, polymers that contain sufficient chemicalinformation to form highly ordered templates over large areas. These templates,which range from arrays of parallel lines, to dots, to much more complex Moirésuperlattice patterns, can be converted into functional materials, such asmetal nanostructures, molecules-on-silicon, and plasmonic stamps. Theversatility of using self-assembly will be combined with large-scalestatistical analysis of ‘quality’, to better understand both the promise andlimitations of this approach to nanopatterning surfaces.

Left: Figures a-d, aligned nanowires of platinum, prepared via directedself-assembly. Right: large-scaleMoiré nanopatterns of ~10 nm silica dots with 3-fold symmetry produced throughincommensurate block copolymer self-assembly. Scale bar = 500 nm.